IXTY02N120P MOSFET Transistor

The IXTY02N120P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTY02N120P transistor as follows.

IXTY02N120P Transistor Specification

Transistor Code		IXTY02N120P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	1200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	75Ohm
Power Dissipation (Maximum)	PD	33W
Operating Junction Temperature (Maximum)		150°C
Rise Time		1600nS
Gate-Threshold Voltage (Maximum)		4V

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