IXTX600N04T2 MOSFET Transistor

The IXTX600N04T2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTX600N04T2 transistor as follows.

IXTX600N04T2 Transistor Specification

Transistor Code		IXTX600N04T2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS247
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	600A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0015Ohm
Power Dissipation (Maximum)	PD	1250W
Operating Junction Temperature (Maximum)		175°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		590nC

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