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IXTX17N120L MOSFET Transistor

The IXTX17N120L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTX17N120L transistor as follows.

Circuit diagram symbol of the IXTX17N120L transistor

IXTX17N120L Transistor Specification

Transistor Code IXTX17N120L
Transistor Type MOSFET
Control Channel Type N-Channel
Package PLUS247
Drain-Source Voltage (Maximum) VDS 1200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 17A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.9Ohm
Power Dissipation (Maximum) PD 700W
Operating Junction Temperature (Maximum) 150°C
Rise Time 1830nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 155nC

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