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IXTX120N65X2 MOSFET Transistor

The IXTX120N65X2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTX120N65X2 transistor as follows.

Circuit diagram symbol of the IXTX120N65X2 transistor

IXTX120N65X2 Transistor Specification

Transistor Code IXTX120N65X2
Transistor Type MOSFET
Control Channel Type N-Channel
Package PLUS247
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.024Ohm
Power Dissipation (Maximum) PD 1250W
Drain-Source Capacitance 9920pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 240nC

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