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IXTV30N60PS MOSFET Transistor

The IXTV30N60PS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTV30N60PS transistor as follows.

Circuit diagram symbol of the IXTV30N60PS transistor

IXTV30N60PS Transistor Specification

Transistor Code IXTV30N60PS
Transistor Type MOSFET
Control Channel Type N-Channel
Package PLUS220SMD
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.24Ohm
Power Dissipation (Maximum) PD 540W
Operating Junction Temperature (Maximum) 150°C
Rise Time 500nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 82nC

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