IXTV26N60PS MOSFET Transistor

The IXTV26N60PS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTV26N60PS transistor as follows.

IXTV26N60PS Transistor Specification

Transistor Code		IXTV26N60PS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS220SMD
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	460W
Operating Junction Temperature (Maximum)		150°C
Rise Time		500nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		72nC

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