IXTV200N10TS MOSFET Transistor

The IXTV200N10TS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTV200N10TS transistor as follows.

IXTV200N10TS Transistor Specification

Transistor Code		IXTV200N10TS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS220SMD
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	200A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	550W
Operating Junction Temperature (Maximum)		175°C
Rise Time		76nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		152nC

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