IXTV02N250S MOSFET Transistor

The IXTV02N250S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTV02N250S transistor as follows.

IXTV02N250S Transistor Specification

Transistor Code		IXTV02N250S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS220SMD
Drain-Source Voltage (Maximum)	VDS	2500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	450Ohm
Power Dissipation (Maximum)	PD	57W
Operating Junction Temperature (Maximum)		150°C
Rise Time		1500nS
Gate-Threshold Voltage (Maximum)		4.5V

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