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IXTU4N60P MOSFET Transistor

The IXTU4N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTU4N60P transistor as follows.

Circuit diagram symbol of the IXTU4N60P transistor

IXTU4N60P Transistor Specification

Transistor Code IXTU4N60P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251
Drain-Source Voltage (Maximum) VDS 600V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2Ohm
Power Dissipation (Maximum) PD 89W
Rise Time 500nS
Total Gate Charge 13nC

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