IXTU1R4N60P MOSFET Transistor

The IXTU1R4N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTU1R4N60P transistor as follows.

IXTU1R4N60P Transistor Specification

Transistor Code		IXTU1R4N60P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	9Ohm
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		150°C
Rise Time		500nS
Gate-Threshold Voltage (Maximum)		5.5V

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