IXTT50P10 MOSFET Transistor

The IXTT50P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT50P10 transistor as follows.

IXTT50P10 Transistor Specification

Transistor Code		IXTT50P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		150°C
Rise Time		180nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		140nC

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