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IXTT50P10 MOSFET Transistor

The IXTT50P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT50P10 transistor as follows.

Circuit diagram symbol of the IXTT50P10 transistor

IXTT50P10 Transistor Specification

Transistor Code IXTT50P10
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO268
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.055Ohm
Power Dissipation (Maximum) PD 300W
Operating Junction Temperature (Maximum) 150°C
Rise Time 180nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 140nC

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