IXTT50P085 MOSFET Transistor

The IXTT50P085 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT50P085 transistor as follows.

IXTT50P085 Transistor Specification

Transistor Code		IXTT50P085
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	85V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		150°C
Rise Time		180nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		150nC

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