IXTT30N60P MOSFET Transistor

The IXTT30N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT30N60P transistor as follows.

IXTT30N60P Transistor Specification

Transistor Code		IXTT30N60P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.24Ohm
Power Dissipation (Maximum)	PD	540W
Operating Junction Temperature (Maximum)		150°C
Rise Time		500nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		82nC

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