IXTT20P50P MOSFET Transistor

The IXTT20P50P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT20P50P transistor as follows.

IXTT20P50P Transistor Specification

Transistor Code		IXTT20P50P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	460W
Operating Junction Temperature (Maximum)		150°C
Rise Time		406nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		103nC

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