IXTT16P60P MOSFET Transistor

The IXTT16P60P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT16P60P transistor as follows.

IXTT16P60P Transistor Specification

Transistor Code		IXTT16P60P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.72Ohm
Power Dissipation (Maximum)	PD	460W
Operating Junction Temperature (Maximum)		150°C
Rise Time		440nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		92nC

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