IXTT16N10D2 MOSFET Transistor

The IXTT16N10D2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT16N10D2 transistor as follows.

IXTT16N10D2 Transistor Specification

Transistor Code		IXTT16N10D2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.064Ohm
Power Dissipation (Maximum)	PD	695W
Operating Junction Temperature (Maximum)		175°C
Total Gate Charge		225nC

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