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IXTT10P60 MOSFET Transistor

The IXTT10P60 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT10P60 transistor as follows.

Circuit diagram symbol of the IXTT10P60 transistor

IXTT10P60 Transistor Specification

Transistor Code IXTT10P60
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO268
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 1Ohm
Power Dissipation (Maximum) PD 300W
Operating Junction Temperature (Maximum) 150°C
Rise Time 500nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 135nC

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