IXTT10N100D MOSFET Transistor

The IXTT10N100D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT10N100D transistor as follows.

IXTT10N100D Transistor Specification

Transistor Code		IXTT10N100D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	400W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		130nC

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