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IXTR210P10T MOSFET Transistor

The IXTR210P10T is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTR210P10T transistor as follows.

Circuit diagram symbol of the IXTR210P10T transistor

IXTR210P10T Transistor Specification

Transistor Code IXTR210P10T
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-247_ISOPLUS-247
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 15V
Drain Current (Maximum) ID 158A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.008Ohm
Power Dissipation (Maximum) PD 390W
Drain-Source Capacitance 4070pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 98nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 740nC

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