IXTR200N10P MOSFET Transistor

The IXTR200N10P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTR200N10P transistor as follows.

IXTR200N10P Transistor Specification

Transistor Code		IXTR200N10P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		175°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		235nC

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