IXTR170P10P MOSFET Transistor

The IXTR170P10P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTR170P10P transistor as follows.

IXTR170P10P Transistor Specification

Transistor Code		IXTR170P10P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		ISOPLUS247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	108A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	312W
Operating Junction Temperature (Maximum)		150°C
Rise Time		176nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		240nC

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