IXTQ96N25T MOSFET Transistor

The IXTQ96N25T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ96N25T transistor as follows.

IXTQ96N25T Transistor Specification

Transistor Code		IXTQ96N25T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	96A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.029Ohm
Power Dissipation (Maximum)	PD	625W
Operating Junction Temperature (Maximum)		150°C
Rise Time		158nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		114nC

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