IXTQ86N25T MOSFET Transistor

The IXTQ86N25T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ86N25T transistor as follows.

IXTQ86N25T Transistor Specification

Transistor Code		IXTQ86N25T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	250V
Drain Current (Maximum)	ID	86A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.037Ohm
Power Dissipation (Maximum)	PD	540W
Rise Time		156nS
Total Gate Charge		105nC

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