IXTQ80N28T MOSFET Transistor

The IXTQ80N28T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ80N28T transistor as follows.

IXTQ80N28T Transistor Specification

Transistor Code		IXTQ80N28T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	280V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.049Ohm
Power Dissipation (Maximum)	PD	500W
Drain-Source Capacitance		510pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		47nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		115nC

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