IXTQ69N30PM MOSFET Transistor

The IXTQ69N30PM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ69N30PM transistor as follows.

IXTQ69N30PM Transistor Specification

Transistor Code		IXTQ69N30PM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	300V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.049Ohm
Power Dissipation (Maximum)	PD	90W
Rise Time		250nS
Total Gate Charge		156nC

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