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IXTQ60N10T MOSFET Transistor

The IXTQ60N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ60N10T transistor as follows.

Circuit diagram symbol of the IXTQ60N10T transistor

IXTQ60N10T Transistor Specification

Transistor Code IXTQ60N10T
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3P
Drain-Source Voltage (Maximum) VDS 100V
Drain Current (Maximum) ID 60A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.018Ohm
Power Dissipation (Maximum) PD 176W
Rise Time 59nS
Total Gate Charge 49nC

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