IXTQ40N50Q MOSFET Transistor

The IXTQ40N50Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ40N50Q transistor as follows.

IXTQ40N50Q Transistor Specification

Transistor Code		IXTQ40N50Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.14Ohm
Power Dissipation (Maximum)	PD	500W
Operating Junction Temperature (Maximum)		150°C
Rise Time		600nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		130nC

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