IXTQ30N60L2 MOSFET Transistor

The IXTQ30N60L2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ30N60L2 transistor as follows.

IXTQ30N60L2 Transistor Specification

Transistor Code		IXTQ30N60L2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.24Ohm
Power Dissipation (Maximum)	PD	540W
Operating Junction Temperature (Maximum)		150°C
Rise Time		710nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		335nC

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