IXTQ280N055T MOSFET Transistor

The IXTQ280N055T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ280N055T transistor as follows.

IXTQ280N055T Transistor Specification

Transistor Code		IXTQ280N055T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	280A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0032Ohm
Power Dissipation (Maximum)	PD	550W
Operating Junction Temperature (Maximum)		175°C
Rise Time		54nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		200nC

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