IXTQ23N60Q MOSFET Transistor

The IXTQ23N60Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ23N60Q transistor as follows.

IXTQ23N60Q Transistor Specification

Transistor Code		IXTQ23N60Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.32Ohm
Power Dissipation (Maximum)	PD	400W
Rise Time		500nS
Total Gate Charge		90nC

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