IXTQ230N085T MOSFET Transistor

The IXTQ230N085T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ230N085T transistor as follows.

IXTQ230N085T Transistor Specification

Transistor Code		IXTQ230N085T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	85V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	230A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0044Ohm
Power Dissipation (Maximum)	PD	550W
Operating Junction Temperature (Maximum)		175°C
Rise Time		90nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		187nC

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