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IXTQ22N50P MOSFET Transistor

The IXTQ22N50P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ22N50P transistor as follows.

Circuit diagram symbol of the IXTQ22N50P transistor

IXTQ22N50P Transistor Specification

Transistor Code IXTQ22N50P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3P
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 22A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.27Ohm
Power Dissipation (Maximum) PD 350W
Operating Junction Temperature (Maximum) 150°C
Rise Time 400nS
Gate-Threshold Voltage (Maximum) 5.5V
Total Gate Charge 50nC

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