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IXTQ200N10T MOSFET Transistor

The IXTQ200N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ200N10T transistor as follows.

Circuit diagram symbol of the IXTQ200N10T transistor

IXTQ200N10T Transistor Specification

Transistor Code IXTQ200N10T
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3P
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 200A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0055Ohm
Power Dissipation (Maximum) PD 550W
Operating Junction Temperature (Maximum) 175°C
Rise Time 76nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 152nC

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