IXTQ200N085T MOSFET Transistor

The IXTQ200N085T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ200N085T transistor as follows.

IXTQ200N085T Transistor Specification

Transistor Code		IXTQ200N085T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	85V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	200A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	480W
Operating Junction Temperature (Maximum)		175°C
Rise Time		90nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		152nC

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