IXTQ180N085T MOSFET Transistor

The IXTQ180N085T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ180N085T transistor as follows.

IXTQ180N085T Transistor Specification

Transistor Code		IXTQ180N085T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	85V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	430W
Operating Junction Temperature (Maximum)		175°C
Rise Time		63nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		170nC

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