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IXTQ180N055T MOSFET Transistor

The IXTQ180N055T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ180N055T transistor as follows.

Circuit diagram symbol of the IXTQ180N055T transistor

IXTQ180N055T Transistor Specification

Transistor Code IXTQ180N055T
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3P
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 180A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.004Ohm
Power Dissipation (Maximum) PD 360W
Drain-Source Capacitance 1190pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 61nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 160nC

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