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IXTQ130N10T MOSFET Transistor

The IXTQ130N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ130N10T transistor as follows.

Circuit diagram symbol of the IXTQ130N10T transistor

IXTQ130N10T Transistor Specification

Transistor Code IXTQ130N10T
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3P
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 130A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0091Ohm
Power Dissipation (Maximum) PD 360W
Operating Junction Temperature (Maximum) 175°C
Rise Time 67nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 104nC

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