IXTQ110N10P MOSFET Transistor

The IXTQ110N10P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ110N10P transistor as follows.

IXTQ110N10P Transistor Specification

Transistor Code		IXTQ110N10P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.015Ohm
Power Dissipation (Maximum)	PD	480W
Operating Junction Temperature (Maximum)		175°C
Rise Time		130nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		110nC

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