IXTQ10P50P MOSFET Transistor

The IXTQ10P50P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ10P50P transistor as follows.

IXTQ10P50P Transistor Specification

Transistor Code		IXTQ10P50P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		150°C
Rise Time		414nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		50nC

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