IXTQ102N20T MOSFET Transistor

The IXTQ102N20T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ102N20T transistor as follows.

IXTQ102N20T Transistor Specification

Transistor Code		IXTQ102N20T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	102A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.023Ohm
Power Dissipation (Maximum)	PD	750W
Operating Junction Temperature (Maximum)		175°C
Rise Time		130nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		114nC

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