IXTP8N65X2M MOSFET Transistor

The IXTP8N65X2M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP8N65X2M transistor as follows.

IXTP8N65X2M Transistor Specification

Transistor Code		IXTP8N65X2M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.55Ohm
Power Dissipation (Maximum)	PD	32W
Drain-Source Capacitance		495pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		5V

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