IXTP8N50PM MOSFET Transistor

The IXTP8N50PM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP8N50PM transistor as follows.

IXTP8N50PM Transistor Specification

Transistor Code		IXTP8N50PM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.88Ohm
Power Dissipation (Maximum)	PD	41W
Operating Junction Temperature (Maximum)		150°C
Rise Time		400nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		20nC

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