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IXTP6N50P MOSFET Transistor

The IXTP6N50P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP6N50P transistor as follows.

Circuit diagram symbol of the IXTP6N50P transistor

IXTP6N50P Transistor Specification

Transistor Code IXTP6N50P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.1Ohm
Power Dissipation (Maximum) PD 100W
Operating Junction Temperature (Maximum) 150°C
Rise Time 400nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 14.6nC

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