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IXTP62N15P MOSFET Transistor

The IXTP62N15P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP62N15P transistor as follows.

Circuit diagram symbol of the IXTP62N15P transistor

IXTP62N15P Transistor Specification

Transistor Code IXTP62N15P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 62A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 350W
Operating Junction Temperature (Maximum) 175°C
Rise Time 150nS
Gate-Threshold Voltage (Maximum) 5.5V
Total Gate Charge 70nC

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