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IXTP56N15T MOSFET Transistor

The IXTP56N15T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP56N15T transistor as follows.

Circuit diagram symbol of the IXTP56N15T transistor

IXTP56N15T Transistor Specification

Transistor Code IXTP56N15T
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 56A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.036Ohm
Power Dissipation (Maximum) PD 300W
Operating Junction Temperature (Maximum) 175°C
Rise Time 100nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 34nC

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