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IXTP4N95A MOSFET Transistor

The IXTP4N95A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP4N95A transistor as follows.

Circuit diagram symbol of the IXTP4N95A transistor

IXTP4N95A Transistor Specification

Transistor Code IXTP4N95A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 950V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.3Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 30nS
Gate-Threshold Voltage (Maximum) 4.5V

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