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IXTP3N120 MOSFET Transistor

The IXTP3N120 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP3N120 transistor as follows.

Circuit diagram symbol of the IXTP3N120 transistor

IXTP3N120 Transistor Specification

Transistor Code IXTP3N120
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 1200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.5Ohm
Power Dissipation (Maximum) PD 200W
Operating Junction Temperature (Maximum) 150°C
Rise Time 700nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 42nC

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