IXTP32N65XM MOSFET Transistor

The IXTP32N65XM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP32N65XM transistor as follows.

IXTP32N65XM Transistor Specification

Transistor Code		IXTP32N65XM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.135Ohm
Power Dissipation (Maximum)	PD	78W
Drain-Source Capacitance		1600pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		49nS
Gate-Threshold Voltage (Maximum)		5.5V

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