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IXTP32N20T MOSFET Transistor

The IXTP32N20T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP32N20T transistor as follows.

Circuit diagram symbol of the IXTP32N20T transistor

IXTP32N20T Transistor Specification

Transistor Code IXTP32N20T
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 32A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.078Ohm
Power Dissipation (Maximum) PD 200W
Operating Junction Temperature (Maximum) 175°C
Rise Time 110nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 38nC

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