IXTP2N80 MOSFET Transistor

The IXTP2N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP2N80 transistor as follows.

IXTP2N80 Transistor Specification

Transistor Code		IXTP2N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5.5Ohm
Power Dissipation (Maximum)	PD	54W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		22nC

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